2SA1103 Datasheet - Inchange Semiconductor

2SA1103, POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1103 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perform.

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Datasheet Details

Part number:

2SA1103

Manufacturer:

Inchange Semiconductor

File Size:

222.20 KB

Description:

POWER TRANSISTOR

Applications

* Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A IB Base Current-Contin

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2SA1103 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1103-like datasheet