2SA1103 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1103 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perform.

📥 Download Datasheet

2SA1103 Datasheet Preview — Preview of 2SA1103 PDF

Datasheet Specifications

Part number: 2SA1103
Manufacturer: Inchange Semiconductor
File Size: 222.20 KB
Datasheet: 2SA1103_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A IB Base Current-Contin

2SA1103 Distributors

📁 Related Datasheet

2SA1102 2SA1104 2SA1105 2SA1106 2SA1107 2SA1108

📌 All Tags

2SA1103 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1103-like datasheet