2SA1189
Hitachi Semiconductor
24.34kb
Silicon pnp epitaxial transistor.
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2SA1180 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA1180
DESCRIPTION ·With TO-3 package ·High power .
2SA1180 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lo.
2SA1182 - Silicon PNP Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1182
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applicatio.
2SA1182-HF - PNP Transistors
(Kexin)
SMD Type
Transistors
PNP Transistors 2SA1182-HF
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
+0.22.8 -0.1
■ Features
● Collector Current Capability IC=.
2SA1184 - Silicon PNP Transistor
(Toshiba)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
FEATURES :
. Complementary to 2SC2824. . Suitable for driver of.
2SA1184 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
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Product Specification
Silicon PNP Power Transistors
2SA1184
DESCRIPTION ·With TO-126 package ·High brea.
2SA1184 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
2SA1184
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V (Min) ·Complement to Type 2SC2824 ·M.
2SA1185 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
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Product Specification
Silicon PNP Power Transistors
2SA1185
DESCRIPTION ·With TO-3PN package ·High curr.
2SA1185 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min.) ·Low Collector-Emitter Saturation Voltage-
.
2SA1186 - Silicon PNP Epitaxial Planar Transistor
(Sanken electric)
LAPT
2SA1186
Application : Audio and General Purpose
(Ta=25°C) 2SA1186 –100max –100max –150min 50min∗ –2.0max 60typ 110typ V pF
20.0min 4.0max
Silic.