Datasheet Details
| Part number | 2SA1185 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 223.45 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1185_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1185 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 223.45 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1185_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.8V(Max.)@ IC= -7A ·Good Linearity of hFE ·Large Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -15 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta =25℃ TJ Junction Temperature -5 A 60 W 2.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1185 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1185 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA1185 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1180 | POWER TRANSISTOR |
| 2SA1184 | POWER TRANSISTOR |
| 2SA1186 | POWER TRANSISTOR |
| 2SA1187 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |