Datasheet Details
| Part number | 2SA1187 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.40 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1187_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1187.
| Part number | 2SA1187 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.40 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1187_InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·plement to Type 2SC2838 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1187 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1180 | POWER TRANSISTOR |
| 2SA1184 | POWER TRANSISTOR |
| 2SA1185 | POWER TRANSISTOR |
| 2SA1186 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |