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2SA1180 - POWER TRANSISTOR

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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Datasheet Details

Part number 2SA1180
Manufacturer Inchange Semiconductor
File Size 207.44 KB
Description POWER TRANSISTOR
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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -4 A 80 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SA1180 isc website：www.iscsemi.
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