2SA1180
Overview
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 2SA1180 |
|---|---|
| Description | POWER TRANSISTOR |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 207.44 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SA1180 | SavantIC | SILICON POWER TRANSISTOR |
| 2SA1189 | Hitachi Semiconductor | Silicon PNP Epitaxial Transistor |
| 2SA1184 | Toshiba | Silicon PNP Transistor |
| 2SA1186 | SavantIC | SILICON POWER TRANSISTOR |
| 2SA1182 | Toshiba | Silicon PNP Transistor |