Datasheet Details
| Part number | 2SA1180 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.44 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1180_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1180 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.44 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1180_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -4 A 80 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SA1180 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1180 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1184 | POWER TRANSISTOR |
| 2SA1185 | POWER TRANSISTOR |
| 2SA1186 | POWER TRANSISTOR |
| 2SA1187 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |