A1201 Datasheet | Specifications & PDF Download

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UNISONIC TECHNOLOGIES CO., LTD 2SA1201 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1201 is designed for power

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A1201 Continuous-Time Bipolar Switch FEATURES AND BENEFITS ▪ Continuous-time operation ▫ Fast power-on time ▫ Low noise ▪ Stable operation over f

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: mm • H

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KSA1201 KSA1201 Power Amplifier • • • • Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Boa

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Plastic-Encapsulate Transistors FEATURES z High voltage z High transition frequency z Small flatpackage z Complementary to 2SC2881 Pb Lead-free Pro

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WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 2SA12T0H1RU FM1200-

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Rating: 1 ★ (4 votes)

2SA1 201 TRANSISTOR(PNP) FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise note

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SMD Type Voltage Amplifier Applications 2SA1201 Transistors Features High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz(typ.) Small

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Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SA1201 FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) 2. COLLECTOR 3.

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DSA12X1 High Performance CMOS MEMS Oscillator for Automotive Features • Automotive AEC-Q100 Qualified • Wide Frequency Range: 2.5 MHz to 170 MHz • Ve

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Security & Wireless Devices •Security sensors and cameras •Wireless occupancy sensors driven by photovoltaic cells or battery to extend battery life.

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TA1201CN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1201CN I2C BUS CONTROL NTSC 1CHIP COLOR TV IC TA1201CN provides PIF, SIF, Vid

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INTEGRATED CIRCUITS DATA SHEET TEA1201TS 0.95 V starting basic power unit Product specification 2002 Jun 06 Philips Semiconductors Product specifica

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