A3G26H502W17S (NXP)
RF Power GaN Transistor
NXP Semiconductors Technical Data
Document Number: A3G26H502W17S Rev. 1, 01/2021
RF Power GaN Transistor
This 80 W asymmetrical Doherty RF power Ga
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NXP Semiconductors Technical Data Document Number.
RF Power GaN Transistor
A3G26H502W17S Distributor
