A3G26H502W17S Datasheet - NXP

A3G26H502W17S RF Power GaN Transistor

NXP Semiconductors Technical Data Document Number: A3G26H502W17S Rev. 1, 01/2021 RF Power GaN Transistor This 80 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in appl.

A3G26H502W17S Features

* High terminal impedances for optimal broadband performance

* Advanced high performance in

* package Doherty

* Improved linearized error vector magnitude with next generation signal

* Able to withstand extremely high output VSWR and broadband operating conditions A3G26H502W17

A3G26H502W17S-NXP.pdf