A3G26H502W17S - RF Power GaN Transistor

NXP

Datasheet Details

High terminal impedances for optimal broadband performance.
Advanced high performance in--package Doherty.
Improved linearized error vector magnitude with next generation signal.
Able to withstand extremely high output VSWR and broadband operating conditions A3G26H502W17S 2496.
2690 MHz, 80 W Avg. , 48 V.

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