A3G26H502W17S

RF Power GaN Transistor

NXP

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	NXP Semiconductors	A3G26H502W17SR3	RF MOSFET GAN 48V NI780	DigiKey	0	250 units	$151.72	🛒 Buy Now

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Datasheet Details

Part number:

A3G26H502W17S

Manufacturer:

NXP ↗

File Size:

341.12 KB

Description:

Rf power gan transistor.
NXP Semiconductors Technical Data Document Number: A3G26H502W17S Rev. 1, 01/2021 RF Power GaN Tran.
sistor This 80 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station.

✔ A3G26H502W17S Features

High terminal impedances for optimal broadband performance
Advanced high performance in
package Doherty
Improved linearized error vector magnitude with next generat

✔ A3G26H502W17S Application

requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. Thi

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A3G26H502W17S Power GaN Transistor NXP

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