A3G26H502W17S Datasheet - NXP

A3G26H502W17S, RF Power GaN Transistor

NXP Semiconductors Technical Data Document Number: A3G26H502W17S Rev.1, 01/2021 RF Power GaN Transistor This 80 W asymmetrical Doherty RF power Ga.

datasheet Preview Page 1 from Datasheet4u.com

A3G26H502W17S-NXP.pdf

A3G26H502W17S Datasheet Preview — Preview of A3G26H502W17S PDF

Datasheet Details

Part number:

A3G26H502W17S

Manufacturer:

NXP ↗

File Size:

341.12 KB

Description:

RF Power GaN Transistor

Features

* High terminal impedances for optimal broadband performance
* Advanced high performance in
* package Doherty
* Improved linearized error vector magnitude with next generation signal
* Able to withstand extremely high output VSWR and broadband operating conditions A3G26H502W17

Applications

* requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications desig

A3G26H502W17S Distributors

📁 Related Datasheet

A3G A3G4250D A3GA A3GJ A3GT

📌 All Tags

A3G26H502W17S Power GaN Transistor NXP

NXP A3G26H502W17S-like datasheet

A3G26D055N