AN-426 Datasheet | Specifications & PDF Download

AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extr

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CEA6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4.6A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. High dense cel

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NTE2426 (NPN) & NTE2427 (PNP) Silicon Complementary Transistors Darlington Switch Description: The NTE2426 and NTE2427 are silicon planer Darlington t

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NS4268 DC、EMI、、3WD+ 1

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NTP5426NG-VB NTP5426NG-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Singl

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HM4264A N-Channel Enhancement Mode Power MOSFET Description The HM4264A uses advanced trench technology and design to provide excellent RDS(ON) with

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www.DataSheet4U.com PD - 91838C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57260 100K Ra

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FT5x26 True Multi-Touch Capacitive Touch Panel Controller INTRODUCTION The FT5X26 is single-chip capacitive touch panel controllers with built-in enha

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Automotive Audio Bus (A2B) Transceiver AD2426/AD2427/AD2428 A2B BUS FEATURES Line topology Single main node, up to 16 subordinate nodes Up to 15 m b

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Ordering number : ENA0319 Monolithic Linear IC LA4262 Overview www.DataSheet4U.com Audio Output for Radio Cassette Recorder Two-channel 7W Power A

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CET6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4.5A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. High dense cell

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DATA SHEET www.onsemi.com MOSFET – Power, Single, N-Channel, DFN5/DFNW5 40 V, 1.3 mW, 235 A NVMFS5C426N Features  Small Footprint (5x6 mm) for Comp

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Silicon Junction FETs (Small Signal) 2SK3426 Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone I

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K-Band Doppler Sensor Module RF Frequency: 24.05 to 24.25 GHz Model No. NJR4262 Specifications Rev.00-02 February 26, 2013 Copyright 2013 New Japan Ra

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Ordering number : EN1463D Monolithic Linear IC LA4265 3.5W Monaural Power Amplifier Overview LA4265 is a 3.5W monaural power amplifier. Features •

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: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1 426 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : VCBo=1500V . Low Saturation Volt

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CEM4269 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -4

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www.DataSheet.co.kr AON7426 30V N-Channel MOSFET General Description The AON7426 combines advanced trench MOSFET technology with a low resistance pa

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LMG3422R030, LMG3426R030 SNOSDA7E – SEPTEMBER 2020 – REVISED FEBRUARY 2024 LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Tempe

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