AO3401 Datasheet | Specifications & PDF Download

FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. Thi

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AO3401A 30V P-Channel MOSFET General Description Product Summary The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gat

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AO3401 30V P-Channel MOSFET General Description Product Summary The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate c

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AO3401A AO3401A Datasheet www.VBsemi.com P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.04

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AO3401, AO3401L (Lead-Free) P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401 uses advanced trench technology to prov

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AO3401-VB AO3401-VB Datasheet P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 at VGS = -

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SMD Type P-Channel Enhancement MOSFET AO3401 (KO3401) MOSFET ■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) ● RDS

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30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A < 64m Ω RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m Ω RDS(ON), Vgs@-2.5V, Ids@-1.

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