AOD200 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor AOD200 FEATURES ·Drain Current –ID=36A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resist

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AOD200 30V N-Channel MOSFET General Description The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high

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AOD200 30V N-Channel MOSFET General Description The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient hig

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