AOD210 Datasheet | Specifications & PDF Download

AOD210 30V N-Channel MOSFET General Description The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient hig

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AOD210 30V N-Channel MOSFET General Description The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high

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AOD210V60E 600V, a MOSE TM N-Channel Power Transistor General Description • Excellent RDS(ON)*A • Optimized switching parameters for better EMI perfo

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isc N-Channel MOSFET Transistor AOD210 FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resi

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