AOD417 Datasheet | Specifications & PDF Download

isc P-Channel MOSFET Transistor AOD417 FEATURES ·Drain Current –ID=-25A@ TC=25℃ ·Drain Source Voltage- : VDSS=-30V(Min) ·Static Drain-Source On-Resi

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AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent RDS(ON)

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