AOI2610 Datasheet | Specifications & PDF Download

AOD2610/AOI2610 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-swi

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isc N-Channel MOSFET Transistor AOI2610 FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resi

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isc N-Channel MOSFET Transistor AOI2610E FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Res

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AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low E

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