APEI
APEHT-0103 - High Temperature Silicon Carbide Schottky Diode
PRELIMINARY
APE HT-0103 High Temperature Silicon Carbide Schottky Diode
FEATURES
High temperature: Tc(max) = 225 C
1200 V / 10 A / 64 nC
Tj(max)
Rating:
1
★
(2 votes)
