
AS4C256K16E0 - 5V 256K x 16 CMOS DRAM
AS4C256K16E0
®
5V 256K×16 CMOS DRAM (EDO) Features
• Organization: 262,144 words × 16 bits • High speed - 30/35/50 ns RAS access time - 16/18/25 ns c
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AS4C256K16E0 ® 5V 256K×16 CMOS DRAM (EDO) Featu.
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