AS4LC1M16E5 ® 3V 1M×16 CMOS DRAM (EDO) Featur.
Alliance Semiconductor
AS4LC1M16E5 - 3V 1M x 16 CMOS DRAM
AS4LC1M16E5 ® 3V 1M×16 CMOS DRAM (EDO) Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns hyper .