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AS4LC1M16E5 - 3V 1M x 16 CMOS DRAM

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AS4LC1M16E5 Product details

Description

A0 to A9 Address inputs RAS Row address strobe DQ1 to DQ16 Input/output OE Output enable WE Write enable UCAS Column address strobe, upper byte LCAS Column address strobe, lower byte VCC Power VSS Ground Selection guide Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access time Minimum read or write cycle time Minimum hyper page mode cycle time Maximum operating current Maximum CMOS standby current Shaded areas indicate a

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