AS4LC1M16E5 3V 1M x 16 CMOS DRAM

Alliance Semiconductor

Description

AS4LC1M16E5 ® 3V 1M×16 CMOS DRAM (EDO) .
A0 to A9 Address inputs RAS Row address strobe DQ1 to DQ16 Input/output OE Output enable WE Write enable UCAS Column address strobe, upper byt.

📥 Download Datasheet

AS4LC1M16E5 Datasheet Preview — Preview of AS4LC1M16E5 PDF

Datasheet Specifications

Part number: AS4LC1M16E5
Manufacturer: Alliance Semiconductor
File Size: 467.96 KB
Datasheet: AS4LC1M16E5-AllianceSemiconductor.pdf
Description: 3V 1M x 16 CMOS DRAM

Features

* Organization: 1,048,576 words × 16 bits
* High speed - 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time
* Low power consumption - Active: 500 mW max (-60) - Standby: 3.6 mW max, CMOS DQ
* Extended data out
* 1024 refresh c

AS4LC1M16E5 Distributors

📁 Related Datasheet

AS4LC4M16 AS4LC4M16S0 AS4LC4M4883C AS4LC8M8S0 AS40 AS40-100K-RC

📌 All Tags

AS4LC1M16E5 CMOS DRAM Alliance Semiconductor

Alliance Semiconductor AS4LC1M16E5-like datasheet