AS4LC1M16E5 Datasheet, Dram, Alliance Semiconductor

AS4LC1M16E5 Features

• Dram
• Organization: 1,048,576 words × 16 bits
• High speed - 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time
• Low power consump

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Part number:

AS4LC1M16E5

Manufacturer:

Alliance Semiconductor

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467.96kb

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📄 Datasheet

Description:

3v 1m x 16 cmos dram. A0 to A9 Address inputs RAS Row address strobe DQ1 to DQ16 Input/output OE Output enable WE Write enable UCAS Column address

AS4LC1M16E5 Application

• Applications The AS4LC1M16E5 features hyper page mode operation where read and write operations within a single row (or page) can be executed at ve

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AS4LC1M16E5

Alliance Semiconductor

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