AS4LC1M16E5 Datasheet - Alliance Semiconductor

AS4LC1M16E5 3V 1M x 16 CMOS DRAM

A0 to A9 Address inputs RAS Row address strobe DQ1 to DQ16 Input/output OE Output enable WE Write enable UCAS Column address strobe, upper byte LCAS Column address strobe, lower byte VCC Power VSS Ground Selection guide Maximum RAS access time Maximum column address access time Maximum C.

AS4LC1M16E5 Features

* Organization: 1,048,576 words × 16 bits

* High speed - 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time

* Low power consumption - Active: 500 mW max (-60) - Standby: 3.6 mW max, CMOS DQ

* Extended data out

* 1024 refresh c

AS4LC1M16E5 Datasheet (467.96 KB)

AS4LC1M16E5 Datasheet Preview — Preview of AS4LC1M16E5 PDF

Datasheet Details

Part number:

AS4LC1M16E5

Manufacturer:

Alliance Semiconductor

File Size:

467.96 KB

Description:

3v 1m x 16 cmos dram.

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