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AS4LC4M16 4 MEG x 16 DRAM

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Description

DRAM Austin Semiconductor, Inc.4 MEG x 16 DRAM Extended Data Out (EDO) DRAM .
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.

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Datasheet Specifications

Part number
AS4LC4M16
Manufacturer
Austin Semiconductor
File Size
545.57 KB
Datasheet
AS4LC4M16_AustinSemiconductor.pdf
Description
4 MEG x 16 DRAM

Features

* Single +3.3V ±0.3V power supply.
* Industry-standard x16 pinout, timing, functions, and package.
* 12 row, 10 column addresses
* High-performance CMOS silicon-gate process
* All inputs, outputs and clocks are LVTTL-compatible
* Extended Data-Out (EDO

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