AS4LC4M16
Austin Semiconductor
545.57kb
4 meg x 16 dram. The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from
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AS4LC4M16S0 - 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
(ETC)
Advance information
®
AS4LC8M8S0 AS4LC4M16S0
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Features
• PC100/133 pliant • Organization - 2,097,152 wor.
AS4LC4M4883C - EDO PAGE MODE
(ASI)
..
AUSTIN SEMICONDUCTOR, INC.
AS4LC4M4 883C 4 MEG x 4 DRAM
DRAM
AVAILABLE IN MILITARY SPECIFICATIONS
• MIL-STD-883 • SMD Planned
.
AS4LC4M4F1 - 4M x 4 CMOS DRAM
(Alliance Semiconductor)
..
May 2001
®
AS4LC4M4F1
4M×4 CMOS DRAM (Fast Page) 3.3V Family Features
• Organization: 4,194,304 words × 4 bits • High speed
- 5.
AS4LC1M16E5 - 3V 1M x 16 CMOS DRAM
(Alliance Semiconductor)
AS4LC1M16E5
®
3V 1M×16 CMOS DRAM (EDO)
Features
• Organization: 1,048,576 words × 16 bits • High speed
- 50/60 ns RAS access time - 20/25 ns hyper .
AS4LC1M16S0 - (AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM
(Alliance Semiconductor)
..
May 2001
Preliminary
®
3.3V 2M × 8/1M × 16 CMOS synchronous DRAM Features
• Organization
- 1,048,576 words × 8 bits × 2 banks (2.
AS4LC1M16S1 - (AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM
(Alliance Semiconductor)
..
May 2001
Preliminary
®
3.3V 2M × 8/1M × 16 CMOS synchronous DRAM Features
• Organization
- 1,048,576 words × 8 bits × 2 banks (2.
AS4LC256K16E0 - 3.3V 256K X 16 CMOS DRAM (EDO)
(Alliance Semiconductor)
..
AS4LC256K16EO
®
3.3V 256K X 16 CMOS DRAM (EDO) Features
• Organization: 262,144 words × 16 bits • High speed
- 45/60 ns RAS acc.
AS4LC2M8S0 - (AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM
(Alliance Semiconductor)
..
May 2001
Preliminary
®
3.3V 2M × 8/1M × 16 CMOS synchronous DRAM Features
• Organization
- 1,048,576 words × 8 bits × 2 banks (2.
AS4LC2M8S1 - (AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM
(Alliance Semiconductor)
..
May 2001
Preliminary
®
3.3V 2M × 8/1M × 16 CMOS synchronous DRAM Features
• Organization
- 1,048,576 words × 8 bits × 2 banks (2.
AS4LC8M8S0 - 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
(ETC)
Advance information
®
AS4LC8M8S0 AS4LC4M16S0
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Features
• PC100/133 pliant • Organization - 2,097,152 wor.