Datasheet4U Logo Datasheet4U.com

AS4LC4M4F1 Datasheet - Alliance Semiconductor

AS4LC4M4F1 4M x 4 CMOS DRAM

Address inputs Row address strobe Column address strobe Write enable Input/output Output enable Power Ground AS4LC4M4F1 *TSOP availability to be determined Selection guide Symbol Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) acce.

AS4LC4M4F1 Features

* Organization: 4,194,304 words × 4 bits

* High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time

* Refresh - 2048 refresh cycles, 32 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh

* TTL-compa

AS4LC4M4F1 Datasheet (295.20 KB)

Preview of AS4LC4M4F1 PDF
AS4LC4M4F1 Datasheet Preview Page 2 AS4LC4M4F1 Datasheet Preview Page 3

Datasheet Details

Part number:

AS4LC4M4F1

Manufacturer:

Alliance Semiconductor

File Size:

295.20 KB

Description:

4m x 4 cmos dram.

📁 Related Datasheet

AS4LC4M4883C EDO PAGE MODE (ASI)

AS4LC4M16 4 MEG x 16 DRAM (Austin Semiconductor)

AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM (ETC)

AS4LC1M16E5 3V 1M x 16 CMOS DRAM (Alliance Semiconductor)

AS4LC1M16S0 (AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM (Alliance Semiconductor)

AS4LC1M16S1 (AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM (Alliance Semiconductor)

AS4LC256K16E0 3.3V 256K X 16 CMOS DRAM (EDO) (Alliance Semiconductor)

AS4LC2M8S0 (AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM (Alliance Semiconductor)

TAGS

AS4LC4M4F1 CMOS DRAM Alliance Semiconductor

AS4LC4M4F1 Distributor