AS4LC2M8S0 Datasheet, Dram, Alliance Semiconductor

AS4LC2M8S0 Features

• Dram
• Organization - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row, 8 column address AS4LC2M8S1 AS4LC2M8

PDF File Details

Part number:

AS4LC2M8S0

Manufacturer:

Alliance Semiconductor

File Size:

1.01MB

Download:

📄 Datasheet

Description:

(as4lcxmxxsx) 3.3v 2m x 8/1m x 16 cmos synchronous dram. Output disable/write mask AS4LC2M8S1 and AS4LC2M8S0 AS4LC1M16S0 and AS4LC1M16S1 DataSheet4U.com VSSQ DQ9 DQ8 VCCQ NC UDQM CLK CKE

AS4LC2M8S0 Application

• Applications SDRAM commands and functions are decoded from control inputs. Basic commands are as follows:
• Mode register set
• Se

TAGS

AS4LC2M8S0

Alliance Semiconductor

📁 Related Datasheet

AS4LC2M8S1 - (AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM (Alliance Semiconductor)
.. May 2001 Preliminary ® 3.3V 2M × 8/1M × 16 CMOS synchronous DRAM Features • Organization - 1,048,576 words × 8 bits × 2 banks (2.

AS4LC256K16E0 - 3.3V 256K X 16 CMOS DRAM (EDO) (Alliance Semiconductor)
.. AS4LC256K16EO ® 3.3V 256K X 16 CMOS DRAM (EDO) Features • Organization: 262,144 words × 16 bits • High speed - 45/60 ns RAS acc.

AS4LC1M16E5 - 3V 1M x 16 CMOS DRAM (Alliance Semiconductor)
AS4LC1M16E5 ® 3V 1M×16 CMOS DRAM (EDO) Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns hyper .

AS4LC1M16S0 - (AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM (Alliance Semiconductor)
.. May 2001 Preliminary ® 3.3V 2M × 8/1M × 16 CMOS synchronous DRAM Features • Organization - 1,048,576 words × 8 bits × 2 banks (2.

AS4LC1M16S1 - (AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM (Alliance Semiconductor)
.. May 2001 Preliminary ® 3.3V 2M × 8/1M × 16 CMOS synchronous DRAM Features • Organization - 1,048,576 words × 8 bits × 2 banks (2.

AS4LC4M16 - 4 MEG x 16 DRAM (Austin Semiconductor)
DRAM Austin Semiconductor, Inc. 4 MEG x 16 DRAM Extended Data Out (EDO) DRAM FEATURES • Single +3.3V ±0.3V power supply. • Industry-standard x16 pinou.

AS4LC4M16S0 - 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM (ETC)
Advance information ® AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 pliant • Organization - 2,097,152 wor.

AS4LC4M4883C - EDO PAGE MODE (ASI)
.. AUSTIN SEMICONDUCTOR, INC. AS4LC4M4 883C 4 MEG x 4 DRAM DRAM AVAILABLE IN MILITARY SPECIFICATIONS • MIL-STD-883 • SMD Planned .

AS4LC4M4F1 - 4M x 4 CMOS DRAM (Alliance Semiconductor)
.. May 2001 ® AS4LC4M4F1 4M×4 CMOS DRAM (Fast Page) 3.3V Family Features • Organization: 4,194,304 words × 4 bits • High speed - 5.

AS4LC8M8S0 - 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM (ETC)
Advance information ® AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 pliant • Organization - 2,097,152 wor.