AS4LC256K16E0 3.3V 256K X 16 CMOS DRAM (EDO)

Alliance Semiconductor

Description

www.DataSheet4U.com AS4LC256K16EO ® 3.3V 256K X 16 CMOS DRAM (EDO) .
Address inputs Row address strobe Input/output Output enable Column address strobe, upper byte Column address strobe, lower byte Read/write control Po.

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Datasheet Specifications

Part number: AS4LC256K16E0
Manufacturer: Alliance Semiconductor
File Size: 812.87 KB
Datasheet: AS4LC256K16E0_AllianceSemiconductor.pdf
Description: 3.3V 256K X 16 CMOS DRAM (EDO)

Features

* Organization: 262,144 words × 16 bits
* High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time - 7/10/10 ns CAS access time
* Low power consumption
* EDO page mode
* 5V I/O tolerant
* 512 refresh cycles, 8 ms refresh inte

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AS4LC256K16E0 3.3V 256K CMOS DRAM EDO Alliance Semiconductor

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