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AS4LC256K16E0

3.3V 256K X 16 CMOS DRAM (EDO)

AS4LC256K16E0 Features

* Organization: 262,144 words × 16 bits

* High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time - 7/10/10 ns CAS access time

* Low power consumption

* EDO page mode

* 5V I/O tolerant

* 512 refresh cycles, 8 ms refresh inte

AS4LC256K16E0 General Description

Address inputs Row address strobe Input/output Output enable Column address strobe, upper byte Column address strobe, lower byte Read/write control Power (3.3V ± 0.3V) Ground I/O6 I/O7 NC NC WE RAS NC A0 A1 A2 AS4LC256K16EO I/O9 I/O8 NC LCAS UCAS OE A8 A7 A6 A5 AS4LC256K16EO 1 2 3 4 5 6 7 8 9 1.

AS4LC256K16E0 Datasheet (812.87 KB)

Preview of AS4LC256K16E0 PDF

Datasheet Details

Part number:

AS4LC256K16E0

Manufacturer:

Alliance Semiconductor

File Size:

812.87 KB

Description:

3.3v 256k x 16 cmos dram (edo).

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TAGS

AS4LC256K16E0 3.3V 256K CMOS DRAM EDO Alliance Semiconductor

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