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plerowTM APL2062.5-R/T PLL Module Features · +10 dBm Output Level at 2062.50MHz · 2nd Harmonic : < -20 dBc · Spurious Level : < -70 dBc · Lock Time :

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AWB578 AWB578 Data Sheet 30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC 1. Product Overview 1.1 General Description AWB578, a medium power amp

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Features Description ASG304 DC-2000 MHz SiGe HBT Amplifier ·SiGe Technology ·18 dB Gain at 900 MHz ·+24 dBm P1dB ·+41 dBm Output IP3 ·2.6 dB Noise

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ASG101 DC-3000 MHz SiGe HBT Amplifier Features ·SiGe Technology ·22 dB Gain at 900 MHz ·+18 dBm P1dB ·+31 dBm Output IP3 ·3.0 dB Noise Figure ·Single

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ASF140 ASF140 Data Sheet 3.3 V IF Gain Block Amplifier MMIC over DC~1000 MHz 1. Product Overview 1.1 General Description ASF140, 3.3V internally match

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SMD Schottky Barrier Diode ASB0240 Features IO = 200mA VR = 40V - Designed for mounting on small surface. - Extremely thin package. - Low leakage cu

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TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The

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Application Notice 1. Delta will not guarantee the performance of the products if the application condition falls outside the parameters set forth in

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( DataSheet : www.DataSheet4U.com ) BACK NEXT NEW SUPPLIER KYCON USB Connectors KYCON RIGHT ANGLE USB SOCKET CONNECTORS KUSB Series - Meets USB 1.

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500mA, 30V Type Low VF, Actual Power =400mV @500mA Small Package : SOD-323 APPLICATIONS Rectification of compact DC/DC converter Surge absorption cau

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NLASB3157 SPDT, 3 W RON Switch The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low pro

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TH50VSF2580/2581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The

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TH50VSF2580/2581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The

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TH50VSF2582/2583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The

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TH50VSF2582/2583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The

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TH50VSF3582/3583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The

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TH50VSF3582/3583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The

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ASX621 DC-3000 MHz MMIC Amplifier Features ·18 dB Gain at 2000 MHz ·32.5 dBm P1dB ·49 dBm Output IP3 ·MTTF > 100 Years ·Two Power Supplies Descripti

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