www.DataSheet4U.com AT10 Series TOCOS A T T E N .
PowerSemiconductors
2-2W5I-AT1004S16 - WATERCOOLEDA.C.SWITCH
POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 01.
Renesas
HAT1047RJ - Silicon P-Channel Power MOSFET
www.DataSheet4U.com HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching Features • For Automotive Application (at Type Cod.
PowerSemiconductors
2-2W5I-AT1004 - WATERCOOLEDA.C.SWITCH
POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 01.
Renesas Technology
HAT1047R - Silicon P-Channel Power MOSFET
www.DataSheet4U.com HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.5.
Renesas
HAT1024R - Silicon P-Channel Power MOSFET
HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi.
Samsung
LTN154AT10 - LCD
Preliminary TO DATE : Mar. 27, 2008. SAMSUNG SAMSUNGTFT-LCD TFT-LCD MODEL MODEL NO. NO. :: LTN154AT10 LTN154AT10 NOTE : - Extension code [ -D ] ; .
Hitachi Semiconductor
HAT1020R - Silicon P-Channel Power MOSFET
HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 H (Z) 9th. Edition February 1999 Features • • • • Low on-resistance C.
Hitachi Semiconductor
HAT1023R - Silicon P-Channel Power MOSFET
HAT1023R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-436 G (Z) 8th. Edition June 1997 Features • • • • Low on-resistance Capab.
Hitachi Semiconductor
HAT1036R - Silicon P-Channel Power MOSFET
HAT1036R Silicon P Channel Power MOS FET Power Switching ADE-208-662D (Z) 5th. Edition February 1999 Features • Low on-resistance R DS(on) = 11 mΩ ty.
Hitachi Semiconductor
HAT1043M - Silicon P-Channel Power MOSFET
HAT1043M Silicon P Channel Power MOS FET Power Switching ADE-208-754D (Z) 5th Edition February 1999 Features • • • • Low on-resistance Low drive curr.
Tyco Electronics
AT10-0017-TB - Voltage Variable Absorptive Attenuator/ 1700 - 2000 MHz
Voltage Variable Absorptive Attenuator, 1700 - 2000 MHz V 5.00 AT10-0017 Features n n n n n n n n n n SOW-16 Input IP3: +31 dBm Min (Full Attenua.
Tyco Electronics
AT10-0019 - PIN Diode Based Variable Attenuator/ 50 - 1000 MHz
PIN Diode Based Variable Attenuator, 50 - 1000 MHz V 5.00 AT10-0019 Features n n n n n n SOW-16 High Dynamic Range: 42dB Typical Flat Attenuation.
Tocos
AT10 - Through-Hole Sealed Cermet Attenuators
www.DataSheet4U.com AT10 Series TOCOS A T T E N U A T O R S ® 10mm Square, Single-Turn, Through-Hole Sealed Cermet Attenuators AT10P AT10S AT10.
Renesas Technology
HAT1048R - Silicon P-Channel Power MOSFET
HAT1048R Silicon P Channel Power MOS FET Power Switching ADE-208-1223A (Z) 2nd. Edition Jan. 2001 Features www.DataSheet4U.com • Capable of -4.5 V g.
Renesas Technology
HAT1054R - Silicon P-Channel Power MOSFET
HAT1054R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • .
Renesas Technology
HAT1089C - Silicon P-Channel Power MOSFET
HAT1089C Silicon P Channel MOS FET Power Switching REJ03G1227-0300 Rev.3.00 Jun. 13, 2005 Features • Low on-resistance RDS(on) = 79 mΩ typ. (at VGS =.
Renesas Technology
HAT1097R - Silicon P-Channel Power MOSFET
HAT1097R, HAT1097RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0529-0100 Rev.1.00 Feb.15.2005 Features • Low on-resistance • Ca.
Innolux
AT102TN03 - LCD
www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr INNOLUX InnoLux copyright 2004 All rights reserved, Copying for.
Innolux
AT102TN01-V1 - LCD
INNOLUX InnoLux copyright 2004 All rights reserved, Copying forbidden. Record of Revision Version 1 Revise Date 2005/12/14 Page Final Specification C.
Renesas
HAT1043M - Silicon P-Channel Power MOSFET
HAT1043M Silicon P Channel Power MOS FET Power Switching Features • Low on-resistance • Low drive current • High density mounting • 2.5 V gate drive .