AT10 Datasheet | Specifications & PDF Download

POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 01

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POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 01

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WAT100TBS12 SCR Module Rev.01 - 19 September 2024 Prroduct data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) mo

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WAT100TBS16 SCR Module Rev.01 - 15 November 2024 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) modu

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HAT1038R/HAT1038RJ Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-663C (Z) 4th. Edition February 1999 Features • • • • For Automo

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HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 H (Z) 9th. Edition February 1999 Features • • • • Low on-resistance C

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HAT1023R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-436 G (Z) 8th. Edition June 1997 Features • • • • Low on-resistance Capab

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BAT1000 1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Mechanical Data  Very Low Forward Voltage Drop  Package: SOT23  High Conductance

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HAT1055R, HAT1055RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0067-0100Z Rev.1.00 Aug.29.2003 www.DataSheet4U.com Features • •

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HAT1093C Silicon P Channel MOSFET Power Switching Features • Low on-resistance RDS(on) = 41 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V ga

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HAT1097R, HAT1097RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0529-0100 Rev.1.00 Feb.15.2005 Features • Low on-resistance • Ca

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www.DataSheet4U.com HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching Features • For Automotive Application (at Type Cod

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HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi

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HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-476 G (Z) 8th. Edition June 1997 Features • • • • Low on-resistance Capab

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HAT1043M Silicon P Channel Power MOS FET Power Switching ADE-208-754D (Z) 5th Edition February 1999 Features • • • • Low on-resistance Low drive curr

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Current Transducer HAT 200..1500-S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary ci

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HAT1026R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi

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HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi

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HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current •

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Current Transducer HAT 500..1500 - S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary

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