AT28C64 Datasheet | Specifications & PDF Download

Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

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Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

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Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times –

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CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES I Fast read access times: – 90/120/150ns I Low power CMOS dissipation: – Active: 25 mA max. – Standby:

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Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs • Self-timed Byte Write Cycle – Internal Address and Data Latches – Internal Cont

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64-Kbit (8K x 8) Industrial Parallel EEPROM with Page Write and Software Data Protection AT28C64B Features • Fast Read Access Time: 150 ns • Automatic

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