Features • Single Supply for Read and Write: 2.7.
AT49BV001AN - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture – .AT49BV001A - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture – .AT49BV001N - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •.AT49BV001T - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •.AT49BV001NT - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •.AT49BV001AT - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture – .AT49BV001ANT - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture – .AT49BV001 - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •.