All-Band Datasheet | Specifications & PDF Download

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ACS730LLC Automotive-Grade, 1 MHz Bandwidth, Galvanically Isolated Current Sensor IC in Small Footprint SOIC8 Package FEATURES AND BENEFITS • AEC-Q1

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TDA7439DS Three-band digitally-controlled audio processor Features Input multiplexer – four stereo inputs – selectable input gain for optimal adap

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< C band internally matched power GaAs FET > MGFC42V6472 6.4 – 7.2 GHz BAND / 16W DESCRIPTION The MGFC42V6472 is an internally impedance-matched GaAs

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FLM8596-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE:

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FLM3742-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.) High PAE: ηad

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FLM1213-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 6.5dB (Typ.) High PAE:

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www.DataSheet4U.com FLM3742-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 11.0d

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FLM3742-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB = 12.0dB (Typ.) • High PAE: hadd = 38%

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FLM4450-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=46.5dBm(Typ.) • High Gain: G1dB=10.0dB(Typ.) • High PAE: hadd=41%(Typ.) •

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FLM5359-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=46.5dBm(Typ.) • High Gain: G1dB=8.5dB(Typ.) • High PAE: hadd=36%(Typ.) •

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FLM5964-35F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=45.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=36%(Typ.) •

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FLM5964-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=47.0dBm(Typ.) • High Gain: G1dB=8.5dB(Typ.) • High PAE: hadd=39%(Typ.) •

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FLM6472-12F FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dB

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FLM0910-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηa

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FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broa

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FLM1011-20F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=43.0dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=27%(Typ.) ・B

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FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE:

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ACS716 120 kHz Bandwidth, High-Voltage Isolation Current Sensor with Integrated Overcurrent Detection FEATURES AND BENEFITS ▪ Industry-leading noise

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For the availability of this product, please contact the sales office.

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