.
ST Microelectronics
TDA7439 - THREE BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR
® TDA7439 THREE BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR INPUT MULTIPLEXER - 4 STEREO INPUTS - SELECTABLE INPUT GAIN FOR OPTIMAL ADAPTATION TO DIF.
STMicroelectronics
TDA7468 - TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR
TDA7468 TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR WITH BASS ALC SURROUND 1 FEATURES INPUT MULTIPLEXER – 4 STEREO INPUTS – SELECTABLE INPUT GAI.
Analog Devices
ADMV8052 - Digitally Tunable Band-Pass Filter
Data Sheet ADMV8052 30 MHz to 520 MHz, Digitally Tunable Band-Pass Filter FEATURES ► Digitally tunable, multioctave, band-pass tuning ► 3 dB bandwidt.
SUMITOMO
FLM2023L-30F - L-Band Internally Matched FET
FLM2023L-30F L-Band Internally Matched FET FEATURES • High Output Power: P1dB=45.0dBm(Typ.) • High Gain: G1dB=13.0dB(Typ.) • High PAE: hadd=43%(Typ.) .
SUMITOMO
ELM7179-4PS - C-Band Internally Matched FET
ELM7179-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=10.5dB (Typ.) High PAE: hadd=35% (Typ.) Broa.
SUMITOMO
FLM6472-4F - C-Band Internally Matched FET
FLM6472-4F FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc.
SUMITOMO
FLM0910-3F - X / Ku-Band Internally Matched FET
FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηa.
SUMITOMO
FLM1011-3F - X / Ku-Band Internally Matched FET
FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: .
SUMITOMO
FLM1011-8F - X / Ku-Band Internally Matched FET
FLM1011-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE: .
SUMITOMO
FLM1011-15F - X / Ku-Band Internally Matched FET
FLM1011-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=31%(Typ.) ・B.
Allegro MicroSystems
ACS710 - 120kHz Bandwidth High Voltage Isolation Current Sensor
ACS710 120 kHz Bandwidth, High-Voltage Isolation Current Sensor with Integrated Overcurrent Detection FEATURES AND BENEFITS ▪ Industry-leading noise .
STMicroelectronics
TDA7439DS - Three-band digitally-controlled audio processor
TDA7439DS Three-band digitally-controlled audio processor Features ! Input multiplexer – four stereo inputs – selectable input gain for optimal adap.
ATMEL Corporation
U2510B - All-Band AM/FM Receiver and Audio Amplifier
U2510B All-Band AM/FM Receiver and Audio Amplifier Description The U2510B is an integrated bipolar one-chip AM/FM radio circuit. It contains an FM fro.
Mitsubishi
MGFC40V7785 - C band internally matched power GaAs FET
< C band internally matched power GaAs FET > MGFC40V7785 7.7 – 8.5 GHz BAND / 10W DESCRIPTION The MGFC40V7785 is an internally impedance-matched GaAs .
ETC
FLM0910-12F - X-Band Internally Matched FET
FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broa.
Eudyna Devices
FLM1011-12F - Ku-Band Internally Matched FET
FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE:.
Sumitomo
FLM3135-8F - C-Band Internally Matched FET
FLM3135-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 37% .
SUMITOMO
ELM7179-7PS - C-Band Internally Matched FET
ELM7179-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm (Typ.) High Gain: G1dB=10.0dB (Typ.) High PAE: ηadd=34% (Typ.) Broa.
SUMITOMO
FLM5964-6F - C-Band Internally Matched FET
FLM5964-6F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.5dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 37% .
SUMITOMO
FLM5964-8F-001 - C-Band Internally Matched FET
FLM5964-8F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=39.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=35%(Typ.).
