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MGFC41V7177 Datasheet - Mitsubishi Electric

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MGFC41V7177 C band internally matched power GaAs FET

< C band internally matched power GaAs FET > MGFC41V7177 7.1 * 7.7 GHz BAND / 12W .
The MGFC41V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7. 7.

MGFC41V7177_MitsubishiElectric.pdf

Preview of MGFC41V7177 PDF

Datasheet Details

Part number:

MGFC41V7177

Manufacturer:

Mitsubishi Electric

File Size:

129.55 KB

Description:

C band internally matched power GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=12W (TYP. ) @f=7.1
* 7.7GHz
* High power gain GLP=9.5dB (TYP. ) @f=7.1
* 7.7GHz
* High power added efficiency P. A. E. =33% (TYP. ) @f=7.1
* 7.7GHz
* Low distortion [ item -51] IM3=-45dB

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