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MGFC45B3436B - C band internally matched power GaAs FET

Description

The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4

3.6 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class AB operation Internally matched to 50(ohm) system.
  • High output power Po(SAT)=30W (TYP. ) @f=3.4.
  • 3.6GHz.
  • High power gain GLP=11.0dB (TYP. ) @f=3.4.
  • 3.6GHz.
  • Distortion ACP=-45dBc (TYP. ) @f=3.4.
  • 3.6GHz.

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Datasheet preview – MGFC45B3436B

Datasheet Details

Part number MGFC45B3436B
Manufacturer Mitsubishi Electric
File Size 337.50 KB
Description C band internally matched power GaAs FET
Datasheet download datasheet MGFC45B3436B Datasheet
Additional preview pages of the MGFC45B3436B datasheet.

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< C band internally matched power GaAs FET > MGFC45B3436B 3.4 – 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class AB operation Internally matched to 50(ohm) system  High output power Po(SAT)=30W (TYP.) @f=3.4 – 3.6GHz  High power gain GLP=11.0dB (TYP.) @f=3.4 – 3.6GHz  Distortion ACP=-45dBc (TYP.) @f=3.4 – 3.6GHz RECOMMENDED BIAS CONDITIONS  VDS=12V  ID=0.
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