MGFC45B3436B Datasheet | Mitsubishi Electric

DESCRIPTION The MGFC45B3436B is an internally impedance-matched Ga As power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class AB operation Internally matched to 50(ohm) system - High output power Po(SAT)=30W (TYP.) @f=3.4 - 3.6GHz - High power gain GLP=11.0d B (TYP.) @f=3.4 - 3.6GHz - Distortion ACP=-45d Bc (TYP.) @f=3.4 - 3.6GHz REMENDED BIAS CONDITIONS - VDS=12V - ID=0.8A - RG=12ohm Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown voltage -10 MAXID Maximum drain current - 1 Total power dissipation Tch Cannel temperature Tstg Storage temperature - 1 : Tc=25C -65 to +175 Unit V V A W C C Electrical characteristics (Ta=25C) Symbol Parameter...