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MGFC41V6472 - C band internally matched power GaAs FET

General Description

The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4

7.2 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=12W (TYP. ) @f=6.4.
  • 7.2GHz.
  • High power gain GLP=9.0dB (TYP. ) @f=6.4.
  • 7.2GHz.
  • High power added efficiency P. A. E. =32% (TYP. ) @f=6.4.
  • 7.2GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=30dBm S. C. L.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< C band internally matched power GaAs FET > MGFC41V6472 6.4 – 7.2 GHz BAND / 12W DESCRIPTION The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=12W (TYP.) @f=6.4 – 7.2GHz  High power gain GLP=9.0dB (TYP.) @f=6.4 – 7.2GHz  High power added efficiency P.A.E.=32% (TYP.) @f=6.4 – 7.2GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=30dBm S.C.L APPLICATION  item 01 : 6.4 – 7.2 GHz band power amplifier  item 51 : 6.4 – 7.2 GHz band digital radio communication OUTLINE DRAWING Unit: millimeters (inches) R1.25 24+ /-0.3 (1) 0.6+/-0.15 2MIN R1.