• Part: MGFC41V6472
  • Description: C band internally matched power GaAs FET
  • Manufacturer: Mitsubishi Electric
  • Size: 87.69 KB
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Mitsubishi Electric
MGFC41V6472
MGFC41V6472 is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
DESCRIPTION The MGFC41V6472 is an internally impedance-matched Ga As power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system - High output power P1d B=12W (TYP.) @f=6.4 - 7.2GHz - High power gain GLP=9.0d B (TYP.) @f=6.4 - 7.2GHz - High power added efficiency P.A.E.=32% (TYP.) @f=6.4 - 7.2GHz - Low distortion [item -51] IM3=-45d Bc (TYP.) @Po=30d Bm S.C.L APPLICATION - item 01 : 6.4 - 7.2 GHz band power amplifier - item 51 : 6.4 - 7.2 GHz band digital radio munication OUTLINE DRAWING Unit: millimeters (inches) R1.25 24+ /-0.3 (1) 0.6+/-0.15 2MIN R1.2 (2) 17.4+/-0.3 8.0+/-0.2 2MIN (3) 20.4+/-0.2 0.1 2.4+/-0.2 15.8 4.0+/-0.4 1.4 QUALITY - IG REMENDED BIAS CONDITIONS - VDS=10V - ID=3.4A Refer to Bias...