MGFC41V7177
MGFC41V7177 is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
DESCRIPTION
The MGFC41V7177 is an internally impedance-matched Ga As power FET especially designed for use in 7.1
- 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system
- High output power
P1d B=12W (TYP.) @f=7.1
- 7.7GHz
- High power gain
GLP=9.5d B (TYP.) @f=7.1
- 7.7GHz
- High power added efficiency
P.A.E.=33% (TYP.) @f=7.1
- 7.7GHz
- Low distortion [ item -51]
IM3=-45d Bc (TYP.) @Po=30d Bm S.C.L.
APPLICATION
- item 01 : 7.1
- 7.7 GHz band power amplifier
QUALITY
- IG
OUTLINE DRAWING
Unit: millimeters (inches)
R1.25
24+ /-0.3
(1) 0.6+/-0.15
2MIN
R1.2
(2)
17.4+/-0.3 8.0+/-0.2
2MIN
(3) 20.4+/-0.2
0.1 2.4+/-0.2 15.8
4.0+/-0.4 1.4
REMENDED BIAS CONDITIONS
- VDS=10V
- ID=3.4A
- RG=50ohm Refer to Bias Procedure
GF-18...
