B1100 Datasheet | Specifications & PDF Download

www avantcom com tw AB1100 Bluetooth 3.0 Single Chip for HID Applications Preliminary Specification VERSION 0.30 15-Mar-2010 This document is commerc

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B170/B - B1100/B Green 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Product Summary (@ +25°C) B170/B VRRM (V) 70 IO (A) 1.0 VF Max (V) 0.79 B180/

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AOT1100L/AOB1100L 100V N-Channel Rugged Planar MOSFET General Description The AOT1100L/AOB1100L uses a robust technology that is designed to provide

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RMWB11001 www.DataSheet4U.com June 2004 RMWB11001 11 GHz Buffer Amplifier MMIC General Description The RMWB11001 is a 2-stage GaAs MMIC amplifier d

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B120W THRU B1100W 1A Surface Mount Schottky Barrier Rectifiers ■ Features • Low profile surface mounted application in order to optimize board space.

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SMD Schottky Barrier Rectifier COMCHIP www.comchip.com.tw CDBB120 Thru CDBB1100 Reverse Voltage: 20 - 100 Volts Forward Current: 1.0 Amp Features I

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B120W-ST THRU B1200W-ST 1A Surface Mount Schottky Barrier Rectifiers ■ Features • Low profile surface mounted application in order to optimize board

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SB120-SB1100 SB120 - SB1100 Features • • 1.0 ampere operation at TA = 75°C with no thermal runaway. For use in low voltage, high frequency inverters

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Data Sheet Customer： Product : Part No.: Issued Date: Edition : Small Signal Schottky Diode-Standard B120W-F/B130W-F/B140W-F/B160W-F/B1100W-F/B1150W

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Data Sheet Customer： Product : Part No.: Issued Date: Small Signal Schottky Diode-Standard B120W / B130W / B140W / B160W / B1100W 11-Jan-11 Edition

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isc N-Channel MOSFET Transistor AOB1100L FEATURES ·Drain Current –ID= 130A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-

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B170/B - B1100/B Green 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Product Summary (@ +25°C) B170/B VRRM (V) 70 IO (A) 1.0 VF Max (V) 0.79 B180/

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SB170 - SB1100 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient P

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B120W-S THRU B1200W-S 1A Surface Mount Schottky Barrier Rectifiers ■ Features • Low profile surface mounted application in order to optimize board sp

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Product Summary (@+25°C) B170BQ VRRM (V) 70 IO (A) 1.0 VF max (V) 0.79 B180BQ VRRM (V) 80 IO (A) 1.0 VF max (V) 0.79 B190BQ VRRM (V) 90 IO (A)

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isc Silicon PNP Darlington Power Transistor 2SB1100 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain-

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B140WG-SL THRU B1200WG-SL Chip Integration Technology Corporation 1A Surface Mount Schottky Barrier Rectifiers ■ Features • Low profile surface mou

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Product Summary (@+25°C) B170Q VRRM (V) 70 IO (A) 1.0 VF max (V) 0.79 B180Q VRRM (V) 80 IO (A) 1.0 VF max (V) 0.79 B190Q VRRM (V) 90 IO (A) 1.

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SIDACtor® Protection Thyristors SLIC Protection Battrax® Series Positive/Negative - Modified DO-214 Agency Approvals Agency Agency File Number E133

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