Datasheet Details
| Part number | 2SB1100 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.34 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2SB1100-InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon PNP Darlington Power Transistor 2SB1100.
| Part number | 2SB1100 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.34 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2SB1100-InchangeSemiconductor.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ IC= -10A ·Complement to Type 2SD1591 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -20 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -10A;
IB= -25mA VBE(sat) Base-Emitter Saturation Voltage IC= -10A;
| Part Number | Description |
|---|---|
| 2SB1144 | Silicon PNP Power Transistors |
| 2SB1152 | Silicon PNP Power Transistors |
| 2SB1153 | Silicon PNP Power Transistors |
| 2SB1182 | Silicon PNP Power Transistor |
| 2SB1184 | Silicon PNP Power Transistor |
| 2SB1089 | Silicon PNP Power Transistors |
| 2SB1090 | Silicon PNP Power Transistors |
| 2SB1095 | Silicon PNP Power Transistors |
| 2SB1201 | Silicon PNP Power Transistor |
| 2SB1202 | Silicon PNP Power Transistor |