Datasheet Summary
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
- High DC Current Gain-
: hFE= 1000(Min)@ IC= -10A
- plement to Type 2SD1591
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio frequency power amplifier and low speed high current switching industrial...