2SB1100 - Silicon PNP Power Transistors

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain- : hFE= 1000(Min)@ IC= -10A Complement to Type 2SD1591 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifie

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Datasheet Details

Part number	2SB1100
Manufacturer	Inchange Semiconductor
File Size	218.34 KB
Description	Silicon PNP Power Transistors
Datasheet	2SB1100 Datasheet

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isc Silicon PNP Darlington Power Transistor 2SB1100 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ IC= -10A ·Complement to Type 2SD1591 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use.