Datasheet Details
| Part number | 2SB1153 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.22 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2SB1153-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1153 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.22 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2SB1153-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -170V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -170 V VCEO Collector-Emitter Voltage -170 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -25 A 150 W 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1153 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1153 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -10A;
IB= -1A -2.5 V VBE(on) Base -Emitter On Voltage IC= -8A;
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