B1240 Datasheet | Specifications & PDF Download

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (T

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XL-MaxSonar® - EZ/AE™ Series XL-MaxSonar®- EZ™ Series High Performance Sonar Range Finder MB1200, MB1210, MB1220, MB1230, MB1240, MB1260, MB1261 MB1

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www.DataSheet4U.com 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor (−32V, −2A) 2SB1188 / 2SB1182 / 2SB1240 Features 1) Low VCE(sat

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MBR1240MFS, NRVB1240MFS SWITCHMODE Power Rectifiers Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and

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Ordering number:ENN843E Monolithic Digital IC LB1240 Fluorescent Display Tube Driver Overview The LB1240 has been designed for interfacing low-level

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MURB1220CS thru MURB12120CS Pb Free Plating Product MURB1220CS thru MURB12120CS Pb 12.0 Ampere Surface Mount Dual Series Connection Ultra Fast Rec

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com

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MBR1240MFS, NRVB1240MFS SWITCHMODE Power Rectifiers Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and

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MBR1240MFS, NRVB1240MFS SWITCHMODE Power Rectifiers Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and

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Ω Ω Ω Ω Ω Ω Ω 180 150 120 90 60 30 0 12 14 16 ΩΩ ΩΩ

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Ω Ω Ω Ω Ω Ω Ω 180 150 120 90 60 30 0 12 14 16 ΩΩ ΩΩ

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Medium Power Transistor FEATURES z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1862. APPLICATIONS z Epitaxial planar type

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MCC Micro Commercial Components TM
     omponents 20736 Marilla Street Chatsworth  # $ % #

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SB 1220 SB 12100 -2 =  >  3  >  >  + 0+  3  >  >  +   >   > 2 /5 6 $ 4 /= 6 $ 4 /== 6 $ 4  $ $

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7.9 TB1240 ： 5T10、5T20、5T25、5T28 。 http://www.Datasheet4U.com 46

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2SB1240 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP 。Silicon PNP transistor in a TO-92LM Plastic Package. / Features -， 2SD1862 。 Lo

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SB1220 SB12100 SB1220 SB12100 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2006-12-08 Nominal current Nennstrom Ø 5.4 ±

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VBB1240 N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022at VGS = 4.5 V 20 0.028 at VGS = 2.5 V 0.039at VG

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SB1220TL SB12100TL .3 >  ?  4  ?  ?  + 1+  4  ?  ?  +   ?   ? 3 06 7 $ 5 0> 7 $ 5 0>> 7 $ 5  $ $

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