Galaxy Century Microelectronics 2SB1240
Medium Power Transistor
| Part No. | 2SB1240 |
|---|---|
| Datasheet | 2SB1240 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Medium Power Transistor |
| Buy | Stock & Price |
FEATURES
z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1862.APPLICATIONS
z Epitaxial planar type. z PNP silicon transistor. Pb Lead-free Production specification 2SB1240 TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A ICP Collector Power Dissipation -3 A PC Collector Power Dissipation 1.0 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V038 Rev.A 1 Production specification Medium Power Transistor 2SB1240ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO IC=-50uA,IE=0 -40 V Collector-emitter breakdown voltage VCEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage
