2SB1240 - Medium Power Transistor

Galaxy Microelectronics

Key Features

z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1862.

2SB1240 medium power transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SB1240
Manufacturer	Galaxy Microelectronics
File Size	180.42 KB
Description	Medium Power Transistor
Datasheet	2SB1240 Datasheet

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Full PDF Text Transcription (Reference)

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Medium Power Transistor FEATURES z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1862. APPLICATIONS z Epitaxial planar type. z PNP silicon transistor. Pb Lead-free Production specification 2SB1240 TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A ICP Collector Power Dissipation -3 A PC Collector Power Dissipation 1.0 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V038 Rev.A www.gmicroelec.