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2SB1243 - Power Transistor

Key Features

  • z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1864.

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Power Transistor FEATURES z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1864. APPLICATIONS z Epitaxial planar type. z PNP silicon transistor. Pb Lead-free Production specification 2SB1243 TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -3 A ICP Collector Power Dissipation -4.5 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V039 Rev.A www.gmicroelec.