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B1252 Power Transistors

Power Transistors 2SB1252 Silicon PNP epitaxial pl.

Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 10.0±0.2 5.5±0.2 Unit: mm 4

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Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 10.0±0.2 5.5±0.2 2.7±0.2 4.2±

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VBFB1252M www.VBsemi.com N-Channel 250 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 250

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VBGPB1252N N-Channel 250 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 250 0.016at VGS = 10 V ID (A) 100 Qg (TYP.) 7

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