2SB1252 Datasheet PDF - Panasonic Semiconductor Silicon PNP epitaxial planar type Transistor Specs

2SB1252 - Silicon PNP epitaxial planar type Transistor

Datasheet Summary

Features

q q q q 0.7±0.1 14.0±0.5 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings.
120.
100.
5.
8.
5 45 2 150.
55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collecto.

Datasheet Details

Part number	2SB1252
Manufacturer	Panasonic Semiconductor
File Size	75.24 KB
Description	Silicon PNP epitaxial planar type Transistor
Datasheet	2SB1252 Datasheet
Additional preview pages of the 2SB1252 datasheet.

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Full PDF Text Transcription

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Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q q 0.7±0.1 14.0±0.5 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –120 –100 –5 –8 –5 45 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.

Published: Mar 22, 2005 |