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2SB1253 - Silicon PNP Transistor

Datasheet Summary

Features

  • q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <.
  • 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings.
  • 130.
  • 110.
  • 5.
  • 10.
  • 6 50 3 150.
  • 55 to +150 Unit V V V A A W ˚C ˚C 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collecto.

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Datasheet Details

Part number 2SB1253
Manufacturer Panasonic Semiconductor
File Size 74.98 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB1253 Datasheet
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Full PDF Text Transcription

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Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –130 –110 –5 –10 –6 50 3 150 –55 to +150 Unit V V V A A W ˚C ˚C 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.
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