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(3 k Ω)(1 0 0 Ω) E
Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1258 –100 –100 –6 –6(Pulse–10) –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SB1258
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–100V VEB=–6V IC=–10mA VCE=–2V, IC=–3A IC=–3A, IB=–6mA IC=–3A, IB=–6mA VCE=–12V, IE=0.2A VCB=–10V, f=1MHz 2SB1258 –10max –10max –100min 1000min –1.5max –2max 100typ 100typ V V MHz pF
13.0min
B Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785)
Application : Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25°C) Unit
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
µA
V
16.9±0.3 8.4±0.2
µA
1.35±0.15 1.35±0.15 0.85 +0.
2SB1258 Datasheet
