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2SB1254 - Silicon PNP Transistor

Datasheet Summary

Features

  • q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 60W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): <.
  • 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings.
  • 160.
  • 140.
  • 5.
  • 12.
  • 7 70 3 150.
  • 55 to +150 Unit V V V A A W ˚C ˚C 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base volta.

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Datasheet Details

Part number 2SB1254
Manufacturer Panasonic Semiconductor
File Size 74.91 KB
Description Silicon PNP Transistor
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Power Transistors 2SB1254 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1894 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 60W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): < –2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –160 –140 –5 –12 –7 70 3 150 –55 to +150 Unit V V V A A W ˚C ˚C 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.
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