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2SB1218A - Silicon PNP Transistor

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Features

  • q q 0.425 1.25±0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP I.

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Datasheet Details

Part number 2SB1218A
Manufacturer Panasonic Semiconductor
File Size 48.12 KB
Description Silicon PNP Transistor
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Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A 2.1±0.1 Unit: mm s Features q q 0.425 1.25±0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) 0.9±0.1 –45 –45 –7 –200 –100 150 150 –55 ~ +150 V V V mA mA mW ˚C ˚C 0.7±0.1 Ratings Unit 0 to 0.1 0.2±0.
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