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2SB1220 - Silicon PNP epitaxial planer type Transistor

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Part number 2SB1220
Manufacturer Panasonic Semiconductor
File Size 36.48 KB
Description Silicon PNP epitaxial planer type Transistor
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Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD1821 2.1±0.1 Unit: mm q q q High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.425 1.25±0.1 0.425 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg –150 –150 –5 –100 –50 150 150 –55 ~ +150 V V V mA mA mW ˚C ˚C 0.7±0.1 0 to 0.1 0.2±0.
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