2SB1221 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
0.45.
0.1
+0.15
2.3±0.2
1:Emitter 2:Collector 3:Base TO.
92NL Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCEO VEBO hFE fT Cob.
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Transistor
2SB1221
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SC3941
Unit: mm
5.0±0.2 4.0±0.2
q q
Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –250 –200 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA W ˚C ˚C
1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27
+0.15
13.5±0.5
0.7±0.1
0.7±0.2
8.0±0.2
s Features
0.45 –0.1
+0.15
2.3±0.
2SB1221 Datasheet
