2SB1209 - Silicon PNP triple diffusion planer type Transistor
Panasonic
Key Features
q q q
1.5 R0.9 R0.9
0.4
2.4±0.2 2.0±0.2 3.5±0.1
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 1.0
0.45±0.05 1
1.0±0.1
R
0. 7
0.85
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
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Transistor
2SB1209
Silicon PNP triple diffusion planer type
For low-frequency amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
s Features
q q q
1.5 R0.9 R0.9
0.4
2.4±0.2 2.0±0.2 3.5±0.1
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat).
1.0
0.45±0.05 1
1.0±0.1
R
0. 7
0.85
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
Ratings –400 –400 –5 –200 –100 1 150 –55 ~ +150 1cm2
Unit V V V mA mA W ˚C ˚C
1:Base 2:Collector 3:Emitter
2.5 2.
2SB1209 Datasheet
