Datasheet Summary
Transistor
Silicon PNP triple diffusion planer type
For low-frequency amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0 s Features q q q
1.5 R0.9 R0.9
2.4±0.2 2.0±0.2 3.5±0.1
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat).
0.45±0.05 1
1.0±0.1
0. 7
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
- Symbol VCBO VCEO VEBO ICP IC PC- Tj Tstg
Ratings
- 400
- 400
- 5
- 200
- 100 1 150
- 55 ~ +150 1cm2
Unit V V V mA mA W ˚C ˚C
1:Base...