2SB1207 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings.
15.
10.
7.
1.
0.5 300 150.
55 ~ +150
Unit V V
1
2
3
1.27 1.27
V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
2.54±0.15
EIAJ:SC.
72 New S Type Package
s Electrical Characteristics
Pa.
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Transistor
2SB1207
Silicon PNP epitaxial planer type
For low-voltage output amplification
Unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
s Features
q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –15 –10 –7 –1 – 0.5 300 150 –55 ~ +150
Unit V V
1
2
3
1.27 1.27
V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
2.54±0.
2SB1207 Datasheet
