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2SB1202 Datasheet PDF

Galaxy Century Microelectronics 2SB1202

PNP Epitaxial Planar Silicon Transistors

Part No. 2SB1202
Datasheet 2SB1202 Download
Manufacturer Galaxy Century Microelectronics
Description PNP Epitaxial Planar Silicon Transistors
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2SB1202 datasheet page 1 preview

FEATURES

● Adoption of FBET, MBIT processes
● Large current capacity and wide ASO
● Low collector-to-emitter saturation voltage
● Fast switching speed
● Small and slim package making it easy to Make 2SB1202-used sets smaller

APPLICATIONS

● High-Current Switching

APPLICATIONS

● Voltage regulators, relay drivers, lamp drivers, Electrical equipment 2SB1202 TO-252 Ordering Information Part Number Package 2SB1202 TO-252 Shipping 80 pcs / Tube or 2500 pcs / Tape & Reel Marking Code B1202 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A ICP Collector Power Dissipation -6 A PC Collector Power Dissipation 1 W TJ, TSTG Junction and Storage temperature range -55 to +150 ℃ STM0655A: December 2017 1 Product Specification PNP Epitaxial Planar Silicon Transistors 2SB1202

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherw...
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