Galaxy Century Microelectronics 2SB1202
PNP Epitaxial Planar Silicon Transistors
FEATURES
● Adoption of FBET, MBIT processes● Large current capacity and wide ASO
● Low collector-to-emitter saturation voltage
● Fast switching speed
● Small and slim package making it easy to Make 2SB1202-used sets smaller
APPLICATIONS
● High-Current SwitchingAPPLICATIONS
● Voltage regulators, relay drivers, lamp drivers, Electrical equipment 2SB1202 TO-252 Ordering Information Part Number Package 2SB1202 TO-252 Shipping 80 pcs / Tube or 2500 pcs / Tape & Reel Marking Code B1202 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A ICP Collector Power Dissipation -6 A PC Collector Power Dissipation 1 W TJ, TSTG Junction and Storage temperature range -55 to +150 ℃ STM0655A: December 2017 1 Product Specification PNP Epitaxial Planar Silicon Transistors 2SB1202ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherw...