onsemi 2SB1202
The 2SB1202/2SD1802 are classified by 100 mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit IB1 PW = 20 ms D.C.| Part No. | 2SB1202 |
|---|---|
| Datasheet | 2SB1202 Download |
| Manufacturer |  onsemi |
| Description | Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
● Adoption of FBET and MBIT Processes● Large Current Capacitance and Wide ASO
● Low Collector to Emitter Saturation Voltage
● Fast Switching Speed
● Small and Slim Package Making it Easy to Make 2SB1202/2SD1802−used Sets Smaller
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical EquipmentABSOLUTE MAXIMUM RATINGS
at TA = 25°C Parameter Symbol Conditions Ratings Unit Collector to Base Voltage VCBO (−)60 V Collector to Emitter Voltage VCEO (−)50 V Emitter to Base Voltage VEBO (−)6 V Collector Current IC (−)3 A Collector Current (Pulse) ICP (−)6 A Collector Dissipation PC 1 W TC = 25°C 15 W Junction Temperature TJ 150 °C Storage Temperature TSTG − 55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2.4 1 3 (For PNP, the polarity is...
