2SB1252 - Silicon PNP epitaxial planar type Transistor
Panasonic
Key Features
q q q q
0.7±0.1
14.0±0.5
Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings.
120.
100.
5.
8.
5 45 2 150.
55 to +150 Unit V V V A A W ˚C ˚C
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collecto.
Silicon PNP triple diffusion planer type Transistor
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SB1252
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD1892
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2
Unit: mm
7.5±0.2
s Features
q q q q
0.7±0.1
14.0±0.5
Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –120 –100 –5 –8 –5 45 2 150 –55 to +150 Unit V V V A A W ˚C ˚C
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.
2SB1252 Datasheet
