Part 2SB1252
Description Silicon PNP epitaxial planar type Transistor
Category Transistor
Manufacturer Panasonic
Size 75.24 KB
Panasonic
2SB1252

Overview

  • 7±0.1
  • 0±0.5 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings -120 -100 -5 -8 -5 45 2 150 -55 to +150 Unit V V V A A W ˚C ˚C
  • 7±0.3 φ3.1±0.1
  • 4±0.1
  • 3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
  • 8±0.1
  • 5 +0.2 -0.1
  • 54±0.25 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) 3 Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
  • h (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = -120V, IE = 0 VCE = -100V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -5V, IC = -1A VCE = -5V, IC = -4A IC = -4A, IB = -4mA IC = -4A, IB = -4mA VCE = -10V, IC = - 0.5A, f = 1MHz IC = -4A, IB1 = -4mA, IB2 = 4mA, VCC = -50V 20 1.0 0.8 1.0 -100 2000 5000 30000 -2.5 -3.0 V V MHz µs µs µs min typ max -100 -100 -100 Unit µA µA µA V FE2 Rank classification