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2SB1252 Datasheet Silicon PNP Epitaxial Planar Type Transistor

Manufacturer: Panasonic

Overview: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.

Key Features

  • q q q q 0.7±0.1 14.0±0.5 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings.
  • 120.
  • 100.
  • 5.
  • 8.
  • 5 45 2 150.
  • 55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collecto.

2SB1252 Distributor

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